The new power transistor with an insulated MIS gate was created. The transistor was developed by Panasonic data. Its advantages are continuous and stable operation without the need to change the threshold voltages. Thanks to this project, Panasonic has introduced this technology to ever-greater miniaturization of electronic circuits.

The main applications of MIS power transistors are power section in electronic circuits. Panasonic thus continues to work on researching the MIS transistor and its structure, specifically on the MIS gate. Thanks to the development of the new technology, it will be possible to obtain even faster values of the power transistor’s operation. Fast switching of GaN MIS power transistors due to the use of high current and voltage is not yet confirmed, because the hysteresis phenomenon also appears in this type of transistors.

Miniaturization of passive components will be possible due to obtaining a higher value of the switching frequency. Panasonic has confirmed the continuous, correct and stable operation of its MIS transistors at a current of 20 A. This information is especially important to develop ultrafast power circuits. The new MIS transistor allows you to achieve, thanks to its technology, very high performance together with the continuous reduction in the size of electronic devices.

Panasonic Power transistor GaN type MIS parameters

– The gate voltage is 10V for stable continuous operation,

– The breakdown voltage is 730V

– 20 A drainage current

– Fast switching time, OFF operations is 1.9 ns

– Turning ON the operation is 4.1 ns

Used technologies to create a GaN power transistor from Panasonic

An AION gate isolator was used, which is designed to suppress the hysteresis phenomenon for the gate voltage in the trigger current. Thanks to this operation, the operation of the MIS transistor is continuous and stable for voltages up to 10V using fast state switching.

The power transistor achieves high drain current values for normal operation. This is achieved thanks to the technology of the growth of the guilds that make up the gate structure. This method does not damage the gate structure.

Uniformity of the process for areas in the production of devices using GaN transistors was obtained by Panasonic. This technology allowed to develop an MIS transistor with high current values and high breakdown voltage values.

Technological data of the Panasonic MIS power transistor

A stable threshold voltage was obtained thanks to the elimination of electronic traps that occur in the insulator. The use of aluminum oxynitride AION for this solution and the improvement of the technology of insulators production contributed to achieving such results. The attenuation of the hysteresis characteristic was achieved for the gate voltage up to 10V. For such voltage values, the work of the MIS power transistor is stable, so Panasonic explains.

Stable operation and hysteresis suppression were achieved by removing process damage to the gate electrode. This was achieved by creating an outer layer of the transistor’s structure at a very high temperature immediately after the cavity was created. Such technology allowed for stable high-current operation.

Panasonic GIT transistors are now in the mass production in their factories. Thanks to the experience from the production of the previous model, the company has developed technologies that can achieve better and better values of current and breakdown voltage. They will be used in the production of the new MIS power transistor model.

The technology for the development of the new MIS power transistor was developed by professors from the Universities of Osaka and Hokkaido. The funds for financing this work were obtained from the Strategic Innovation Promotion Program (SIP).