News Vishay Intertechnology 600 V EF Series Fast Body Diode MOSFET Delivers Industry-Low...

Vishay Intertechnology 600 V EF Series Fast Body Diode MOSFET Delivers Industry-Low RDS(ON)*Qg FOM for Power Conversion Applications

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Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new Apparatus in its fourth production of 600 V EF Series rapid body diode MOSFETs. Supplying high efficiency for telecommunication, computing, industrial, and business power distribution programs, the Vishay Siliconix n-channel SiHH070N60EF slashes on-resistance by 29 percent in comparison with previous-generation apparatus, while providing 60% reduced gate fee. This results in the business cheapest on-resistance occasions gate fee for apparatus in the Exact Same class, an Integral figure of merit (FOM) for 600 V MOSFETs used in power conversion software.

Vishay Provides a broad lineup of MOSFET Technology that support all phases of the energy conversion process, from top voltage inputs into the very low voltage outputs necessary to power the newest high technology gear. Together with the SiHH070N60EF and forthcoming devices in the fourth-generation 600 V EF Series household, the Business is addressing the importance of efficiency and energy density enhancements within two of the initial stages of the grid structure — totem-pole bridgeless power factor correction (PFC) and also soft-switched DC/DC converter topologies.

Built on Vishay’s most recent weatherproof E Series superjunction technologies, the SiHH070N60EF attributes low average on-resistance of all both 0.061 Ω in 10 Cable and ultra low gate fee down to 50 nC. The apparatus’s FOM of 3.1 Ω*nC is 30 percent lower than the nearest rival MOSFET at the same course. These principles translate into decreased conduction and switching losses to conserve energy. For enhanced switching functionality in zero voltage switching (ZVS) topologies like LLC resonant converters, the SiHH070N60EF Offers low powerful output capacitances Co(er) and Co(tr) of 90 pf along with 560 pF, respectively. The apparatus’s Co(tr) will be 32 percent lower than the nearest rival MOSFET in precisely exactly the exact identical class.

Launched at the PowerPAK® 8×8 bundle, the apparatus released now is RoHS-compliant, halogen-free, also made to resist overvoltage transients In avalanche manner with ensured limitations through 100 percent UIS testing.

Samples and production quantities of these SiHH070N60EF are available now, with lead times of 10 months.

 

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