NewsInfineon Technologies AG Unveils 750V G1 Discrete CoolSiC™ MOSFETs

Infineon Technologies AG Unveils 750V G1 Discrete CoolSiC™ MOSFETs

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Global semiconductor manufacturer, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) based in Munich, Germany, recently announced the introduction of 750V G1 discrete CoolSiC™ MOSFET. The new product is designed to cater to the escalating demand for enhanced efficiency and power density in industrial and automotive power applications.

Product Offering

The product family comprises industrial-graded and automotive-graded SiC MOSFETs that are fine-tuned for a variety of topologies. These include totem-pole PFC, T-type, LLC/CLLC, dual active bridge (DAB), HERIC, buck/boost, and phase-shifted full bridge (PSFB). The MOSFETs are suitable for a wide range of industrial applications such as electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breaker, UPS systems, servers/datacenters, telecom. They are equally applicable in the automotive sector, in areas such as onboard chargers (OBC), DC-DC converters, among others.

Technical Specifications

The CoolSiC MOSFET 750 V G1 technology is characterized by advanced RDS (on) x Q fr and superior RDS (on) x Q oss Figure-of-Merits (FOMs), resulting in extreme efficiency in both hard-switching and soft-switching topologies. Its unique blend of high threshold voltage (V GS(th) , Typ. of 4.3 V) with low Q GD /Q GS ratio ensures high robustness against parasitic turn-on. This combination enables unipolar gate driving, leading to an increase in power density and a reduction in the cost of the systems. The devices utilize Infineon’s proprietary die-attach technology which provides exceptional thermal impedance for equivalent die sizes. The highly reliable gate oxide design, combined with Infineon’s qualification standards, ensures robust and long-term performance.

Portfolio Range

With a granular portfolio ranging from 8 to 140 mΩ RDS (on) at 25°C, this new CoolSiC MOSFET 750 V G1 product family meets a wide range of needs. The design ensures lower conduction and switching losses, thereby enhancing the overall system efficiency. The innovative packaging minimizes thermal resistance, facilitates improved heat dissipation, and optimizes in-circuit power loop inductance. This results in high power density and reduced system costs. The product family features the state-of-the-art QDPAK top-side cooled package.


The CoolSiC MOSFET 750 V G1 for automotive applications is available in QDPAK TSC, D2PAK-7L, and TO-247-4 packages. For industrial applications, QDPAK TSC and TO-247-4 packages are offered. More information can be obtained at Infineon’s official website and through a webinar series that provides further insights into the benefits of the CoolSiC MOSFET 750 V G1 in onboard charging applications.

Michal Pukala
Electronics and Telecommunications engineer with Electro-energetics Master degree graduation. Lightning designer experienced engineer. Currently working in IT industry.