Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), a global leader in power systems and Internet of Things (IoT), announced the launching of a new epoch in power systems and energy conversion. A key highlight is the unveiling of the next generation of silicon carbide (SiC) MOSFET trench technology.
CoolSiC™ MOSFET 650 V and 1200 V Generation 2
The groundbreaking Infineon CoolSiC™ MOSFET 650 V and 1200 V Generation 2 have been introduced with impressive attributes. They enhance the MOSFET key performance metrics, such as stored energies and charges, by up to 20 percent compared to the preceding generation. This significant advancement does not compromise quality and reliability levels. Instead, it leads to elevated overall energy efficiency and further aids in the decarbonization process.
Benefits of CoolSiC MOSFET Generation 2 Technology
The CoolSiC MOSFET Generation 2 (G2) technology continues to exploit the performance capabilities of silicon carbide. It facilitates lower energy loss during power conversion, resulting in higher efficiency. This offers substantial advantages to customers in various power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives, and industrial power supplies.
Implications for Electric Vehicles and Renewable Energies
Electric vehicles equipped with a DC fast charging station featuring CoolSiC G2 technology experience up to 10 percent less power loss compared to previous generations. This allows for increased charging capacity without compromising form factors. Furthermore, traction inverters based on CoolSiC G2 devices can augment electric vehicle ranges. In the renewable energies sector, solar inverters designed with CoolSiC G2 enable smaller sizes while maintaining high power output. This results in a reduced cost per watt.
Advancing Silicon Carbide Performance
Dr. Peter Wawer, Division President Green Industrial Power at Infineon, emphasized the significance of the CoolSiC MOSFET G2 technology. According to Dr. Wawer, this new generation of SiC technology enables the expedited design of more cost-optimized, compact, reliable, and highly efficient systems. These systems help to harvest energy savings and reduce CO2 for every watt installed in the field. This development is a testament to Infineon’s commitment to pushing for innovation to drive decarbonization and digitalization in the industrial, consumer, and automotive sectors.
Infineon’s Pioneering Technology
Infineon’s pioneering CoolSiC MOSFET trench technology, which contributes to high-performance CoolSiC G2 solutions, allows for an optimized design trade-off. This results in higher efficiency and reliability compared to previous SiC MOSFET technology. Coupled with the award-winning .XT packaging technology, Infineon further enhances the potential of designs based on CoolSiC G2. This is achieved through higher thermal conductivity, improved assembly control, and enhanced performance.
Infineon’s Mastery of Power Technologies
Infineon’s expertise in all relevant power technologies, including silicon, silicon carbide, and gallium nitride (GaN), offers design flexibility. The company’s cutting-edge application knowledge meets the expectations and demands of modern designers. Semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are key to conscious and efficient use of energy, fostering decarbonization.
