Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a brand-new 30 V n-channel MOSFET half-bridge power phase that integrates a high side TrenchFET ® MOSFET and also low side SkyFET ® MOSFET with integrated Schottky diode in one compact PowerPAIR ® 3.3 mm by 3.3 mm package. For power conversion in computer and telecommunications applications, the Vishay Siliconix SiZF300DT delivers raised power thickness and also effectiveness, while minimizing part counts as well as simplifying styles.
Both MOSFETs in the tool released today are internally attached in a half-bridge configuration. The Network 1 MOSFET supplies maximum on-resistance of 4.5 mΩ at 10 V and 7.0 mΩ at 4.5 V. The Network 2 MOSFET features on-resistance of 1.84 mΩ at 10 V and also 2.57 mΩ at 4.5 V. Typical entrance fee for the MOSFETs is 6.9 nC and 19.4 nC, respectively.
The SiZF300DT is 65 % smaller than double gadgets in 6 mm by 5 mm bundles with similar on-resistance, making it one of the most small incorporated items on the market. The tool gives developers with a space-saving option for point-of-load (POL) conversion, power materials and simultaneous buck as well as DC/DC converters in graphic and also accelerator cards, computer systems, servers, and also telecom and RF networking devices.
The twin MOSFET includes a distinct pin setup as well as construction that delivers up to 11 % higher outcome present per current stage than contending products in the same impact area, along with greater performance for outcome existing above 20 A. The gadget’s pin configuration and also huge PGND pad also improve thermal transfer, enhance the electrical course, as well as make it possible for a streamlined PCB format.
The SiZF300DTis 100 % Rg- as well as UIS-tested, RoHS-compliant, and halogen-free.
