Onsemi, a global leader in intelligent power- and sensing technologies, announced today a trio silicon carbide (SiC), based power modules in transfer mold technology. These power modules are designed for on-board charging and high-voltage (HV) DCDC conversion in all types of electric cars (xEV). The APM32 series, the first of its kind, incorporates SiC technology in a transfer-molded package to improve efficiency and reduce charge time for xEVs. It is designed specifically for high-power 11-22kW OBCs.
The three modules combine best-in-class thermal resistance with high voltage isolation to handle 800V bus voltage. OBCs with higher efficiency and lower heat production are more powerful thanks to their improved efficiency. Two critical elements for consumers are the ability to charge the xEV faster, and extend its operating range.
Fabio Necco is vice president and general manager of Automotive Power Solutions at onsemi. “Our new modules use the latest SiC technology, minimising losses and overall system volume. This allows designers to achieve charging efficiency and space goals,” he said. Designers can quickly configure their designs by using the pre-configured modular format. This allows them to do so with significantly less time and lower design risk.
The APM32 modules take advantage of onsemi’s SiC supply chain capabilities and proven SiC MOSFETs, diodes and diodes. Each module is serialized to ensure full traceability. These modules are capable of operating at junction temperatures (Tj), up to 175°C. This ensures reliability in difficult, space-constrained automotive applications.
Simon Keeton is executive vice president and general manger, Power Solutions Group at onsemi. “APM32 offers a different solution for our customers because it leverages onsemi’s best-in–class packaging to unleash all the capability of the leading edge silicon carbide technology.” “We also know that our customers value supply security, which is why we offer SiC supply chains to all ends of the supply chain.”
The APM32 series modules NVXK2TR40WXT & NVXK2TR80WDT are both configured in H-bridge topology and have a breakdown (V(BR/DSS) capability at 1200 V. This ensures that they can be used with high voltage battery stacks. They can be used in OBC and HV DCDC conversion steps. The third module, NVXK2KR80WDT is designed in Vienna Rectifier topology. It is used in the OBC’s power factor correction (PFC). In the near future, there will be six-pack modules and full-bridge modules to complete the SiC OBC portfolio.
The compact, robust Dual Inline Package (DIP) houses all three modules and ensures low module resistance. The automotive industry’s strictest standards are met by the top cool and isolated features. IEC 60664-1 and IEC 60095-1 standards are met for creepage and clearance. The modules are also qualified to AEC Q101 and AQG 324, for automotive use.