NewsSTMicroelectronics Unveils M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM for Mobile and...

STMicroelectronics Unveils M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM for Mobile and Wearable Devices

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STMicroelectronics has recently released the M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM, which is specially designed to cater to the needs of mobile and wearable devices. The device offers a plethora of features including high-memory density, ultra-low power consumption, and a rich feature set, which makes it an ideal choice for developers looking to optimize their designs.

High-memory density refers to the amount of data that can be stored in a given area of memory. In the case of the STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM, high-memory density means that it can store a large amount of data in a compact space. This is achieved through the use of advanced memory cell technology and smart page architecture, which enable the memory to store more data per unit area than traditional memory technologies. This high-memory density is particularly useful in mobile and wearable devices where space is often at a premium and there is a need to store a large amount of data in a small footprint.

The M95P32 EEPROM leverages the patented e-STM 40nm non-volatile memory (NVM) cell technology and smart page architecture to provide high memory density for firmware with byte flexibility and high endurance for simplified data logging. This enables developers to streamline their data logging processes and optimize their firmware design. The device also features fast read, erase, and program cycles, which significantly reduces manufacturing costs and application downtimes by enabling rapid upload and download.

Non-volatile memory (NVM) cell technology is a type of memory technology that can retain data even when power is removed. In the case of the STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM, the NVM cell technology is based on a patented e-STM 40nm technology that uses a floating gate structure to store charge. This floating gate structure is surrounded by an oxide layer that prevents the charge from leaking away, which enables the memory to retain data even when power is removed.

The NVM cell technology used in the M95P32 EEPROM is non-volatile, which means that it can store data for an extended period of time without the need for a continuous power source. This is different from volatile memory, such as DRAM, which requires power to retain data. Non-volatile memory is particularly useful in applications where power may be interrupted or where data must be retained even when the device is turned off.

In summary, the NVM cell technology used in the STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM is based on a floating gate structure that stores charge, which is surrounded by an oxide layer to prevent leakage. This technology allows the EEPROM to retain data even when power is removed, making it an ideal choice for applications where power may be interrupted or where data must be retained when the device is turned off.

The M95P32 EEPROM supports byte and page write instructions of up to 512 bytes, which allows for flexible data byte management. The device accepts page/block/sector/chip erase commands to set the memory to an erased state, which can then be fast-programmed by pages of 512bytes. This feature is further optimized using “page program with buffer load” to hide the SPI communication latency, which results in faster application wake-up times.

Flexible data byte management refers to the ability to read, write, and erase data in small or large increments of bytes. In the case of the STMicroelectronics M95P32 Ultra Low-Power 32Mbit SPI Page EEPROM, the device offers byte and page write instructions of up to 512 bytes. This means that developers can write or modify data in small increments of bytes, which provides greater flexibility in managing data.

This flexibility in data byte management is useful for applications where there is a need to modify or update specific sections of data without erasing or modifying the entire memory. For example, in a data logging application, it may be necessary to update only a small section of data while leaving the rest of the data intact. With flexible data byte management, developers can update only the required data without affecting the rest of the memory.

The STMicroelectronics M95P32 32Mbit SPI Page EEPROM is an all-in-one memory designed for ultra-low power, efficient data logging, and fast firmware upload/download. The device simplifies NVM integration, reduces BOM cost, and boosts power efficiency, making it an ideal choice for developers looking to optimize their mobile and wearable device designs. With its rich feature set and high memory density, the M95P32 EEPROM is a reliable and efficient choice for anyone looking to streamline their data logging processes and optimize their firmware design.

Michal Pukala
Electronics and Telecommunications engineer with Electro-energetics Master degree graduation. Lightning designer experienced engineer. Currently working in IT industry.

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