Infineon’s Latest Innovation: OptiMOS™ 7 Family
In an era where the demand for power in data centers and computing applications is escalating, there is a pressing need for advancements in power efficiency and the design of compact power supplies. Addressing these critical trends, Infineon Technologies AG, a leader in semiconductor solutions, has announced the launch of its groundbreaking OptiMOS™ 7 family. This new series stands as the industry’s first 15 V trench power MOSFET technology, setting a new standard in the field.
Targeting Enhanced DC-DC Conversion
The OptiMOS 7 15 V series is strategically designed to optimize DC-DC conversion processes in various high-demand environments, including servers, computing, data centers, and artificial intelligence applications. This technological leap forward promises to significantly influence the efficiency and performance of these critical systems.
Advanced Packaging and Design
Infineon’s product portfolio for OptiMOS 7 includes the innovative PQFN 3.3 x 3.3 mm² Source-Down package, featuring variants that allow for both bottom- and dual-side cooling. These variants are available in both standard- and center-gate footprints. Furthermore, the portfolio is bolstered by the introduction of a robust PQFN 2 x 2 mm² variant, which includes a reinforced clip for added durability and reliability.
Optimized for Low Voltage DC-DC Conversions
The OptiMOS 7 15 V technology is specifically engineered for DC-DC conversions with low output voltages. This focus is particularly relevant in server and computing environments where efficiency and reliability are paramount. The technology aligns with the emerging trends towards high ratio DC-DC conversion in data center power distribution, marking a significant shift in the industry.
Technological Advancements and Efficiency
When compared to the established OptiMOS 5 25 V technology, the new OptiMOS 7 15 V series achieves a remarkable reduction in R DS(on) and FOMQ g by approximately 30 percent, and FOMQ OSS by around 50 percent. This is achieved by lowering the breakdown voltage, a key factor in enhancing overall efficiency.
Enhancing Power Density and Thermal Management
The introduction of the PQFN 3.3 x 3.3 mm² Source-Down package variants offers a more versatile and effective approach to PCB design. In addition, the PQFN 2 x 2 mm² package variant boasts a pulsed current capability exceeding 500 A and a typical R thJC of 1.6 K/W. These advancements are crucial in minimizing conduction and switching losses. Coupled with advanced packaging technology, they facilitate easy and effective thermal management. This not only sets new benchmarks in power density but also in overall efficiency, heralding a new era in power technology for computing and data centers.
