Two new dual-channel galvanically-isolated gate drivers for IGBTs and silicon-carbide (SiC) MOSFETs from STMicroelectronics save space and ease circuit design in high-voltage power-conversion and industrial applications.
The STGAP2HD IGBTs and STGAP2SICD in SiC MOSFETs utilize ST’s latest galvanic isolation technology to deliver the capability of transient voltages up to 6kV in an SO-36W wide-body. Additionally, the +100V/ns dv/dt transient immunity prevents a false turning-on under noisy electrical operating conditions. The devices are able to provide strong gate-control signals of up to 4A. They also have two output pins to provide more flexibility in gate-driven operation and allowing for an independent setting of turn-on times and turn-off durations. A resonant Miller clamp is designed to prevent gate spikes during fast commutation within half-bridge topologies.
Protection for circuits includes thermal, monitor for secure operation, and an the ability to lock out under voltage (UVLO) for each channel in order to stop the system from starting in a risky low-efficiency mode. The STGAP2SICD comes with a raised UVLO threshold voltage, which is specifically designed to meet the requirements for SiC MOSFETs.
Each device is equipped with an iLOCK pin to turn on both channels at once in dual low-side or Asymmetrical half-bridge applications. Also, interlocking is used to stop shoot-through currents from occurring in traditional half-bridge circuits. Both drivers are rated to voltages as high as 1200V on the high voltage rail. They also have an input-to-output propagation times of 75ns and high precision PWM.
With dedicated shutdown and brake pins, and a standby pin for power saving, ST’s new dual-channel galvanically-isolated gate drivers target applications including power supplies, drives, inverters, welders, and chargers. Additionally input pins that work are compatible with TTL as well as CMOS logic up to 3.3V facilitate connection to a host microcontroller or DSP.
