Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has recently unveiled significant advancements in its 1200 V and 2000 V CoolSiC MOSFET module families. This leap forward is encapsulated in a newly standardized package, featuring the 62mm device in a half-bridge topology. The core of this innovation lies in the M1H silicon carbide (SiC) MOSFET technology, offering a breakthrough in mid-power applications ranging up to 250 kW.
Enhanced Power Density and Application Scope
The integration of the M1H technology facilitates an extended gate voltage window, which translates to heightened robustness against voltage spikes. This feature is particularly beneficial at high switching frequencies. The MOSFET’s design, optimized for minimal switching and transmission losses, significantly reduces the need for cooling. These characteristics, combined with a high reverse voltage capability, align with the stringent demands of contemporary system design.
Applications previously constrained by silicon’s power density limitations in IGBT technology, such as solar energy systems, server power supplies, energy storage solutions, EV chargers, traction systems, commercial induction cooking, and power conversion systems, stand to benefit immensely from this technological upgrade.
Optimization in Converter Design and System Efficiency
Utilizing Infineon’s CoolSiC chip technology, converter designs can now achieve enhanced efficiency. This not only allows for an increase in nominal power per inverter but also paves the way for a reduction in overall system costs. The new modules represent a strategic shift towards more efficient, robust, and cost-effective power management solutions in various industries.
Robust Design and Reliability
The newly designed package, featuring baseplate and screw connections, exemplifies mechanical robustness, tailored for maximal system availability. This design minimizes service costs and potential downtime losses. The high thermal cycling capability and the ability to operate continuously at temperatures up to 150°C ensure remarkable reliability. Additionally, the symmetrical internal design of the package ensures uniform switching conditions, thereby enhancing performance consistency.
Further enhancements in thermal performance can be achieved through the optional use of pre-applied thermal interface material (TIM).
Product Availability and Specifications
The 1200 V variants of the CoolSiC 62mm package MOSFETs are currently available in 5 mΩ/180 A, 2 mΩ/420 A, and 1 mΩ/560 A configurations. The 2000 V portfolio is set to include 4 mΩ/300 A and 3 mΩ/400 A variants. The complete range, including the 1200 V/3 mΩ and 2000 V/5 mΩ variants, is expected to be available in Q1 2024. An evaluation board has been introduced for rapid characterization of these modules, offering flexibility in the adjustment of gate voltage and gate resistors for efficient testing.
