NewsInfineon Unveils Next-Generation 1200V CoolSiC MOSFETs for Automotive Applications: Enabling High Power...

Infineon Unveils Next-Generation 1200V CoolSiC MOSFETs for Automotive Applications: Enabling High Power Density, Efficiency, and Cost Reduction in On-Board Charging and DC-DC Systems

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Infineon, a renowned semiconductor solutions provider, has introduced its latest innovation in the form of the new generation 1200V CoolSiC™ MOSFETs. These cutting-edge automotive-graded silicon carbide (SiC) MOSFETs offer exceptional power density, efficiency, and cost savings for on-board charging (OBC) and DC-DC applications. With advanced features and improved performance, they are set to revolutionize the automotive industry.

Enhanced Switching Performance and Power Density
The 1200V CoolSiC family member delivers unparalleled switching performance, boasting 25 percent lower switching losses compared to its predecessor. This advancement enables high-frequency operation, leading to more compact system designs and increased power density. With a Gate-source threshold voltage (V GS(th)) exceeding 4V and an incredibly low Crss/Ciss ratio, the new MOSFETs achieve reliable turn-off at V GS = 0V, eliminating the risk of parasitic turn-ons. This unipolar driving capability reduces system complexity and cost, while the low on resistance (R DS(on)) ensures minimal conductive losses across the entire temperature range (-55°C to 175°C).

.XT Technology for Superior Thermal Capabilities
Infineon’s innovative advanced diffusion soldering chip mount technology (.XT technology) significantly improves the thermal capabilities of the MOSFET package. By employing this specialized soldering technique, the junction temperature of the SiC MOSFET is lowered by an impressive 25 percent compared to the previous generation. This breakthrough enhances thermal management, leading to improved device reliability and overall performance.

Flexible Options and Versatility
The new MOSFET generation includes a creepage distance of 5.89mm, meeting the stringent 800V system requirements while reducing coating effort. Infineon offers a range of R DS(on) options to cater to diverse application demands, including the market’s exclusive 9 mΩ type in the TO263-7 package. This versatility allows engineers to select the ideal MOSFET for their specific automotive requirements, ensuring optimized performance and efficiency.

KOSTAL Chooses Infineon’s CoolSiC MOSFET for OBC Platform
Infineon’s CoolSiC MOSFET has already made its mark in the automotive industry. KOSTAL Automobil Elektrik, a leading global supplier of automotive charger systems, has incorporated Infineon’s latest CoolSiC MOSFET into their next-generation OBC platform for Chinese OEMs. This partnership aims to address the pressing challenge of decarbonization and shape the future of car electrification. The high voltage rating and qualified robustness of Infineon’s 1200V CoolSiC Trench MOSFET perfectly align with KOSTAL’s commitment to delivering safe, reliable, and highly efficient products that meet global regulations and OEM requirements.

Infineon’s new generation of 1200V CoolSiC MOSFETs brings unprecedented advancements to the field of automotive applications. With exceptional power density, efficiency, and the ability to enable bi-directional charging, these MOSFETs significantly reduce system costs while enhancing performance. The integration of advanced technologies such as .XT technology and the collaboration with industry leaders like KOSTAL highlight Infineon’s dedication to driving innovation and shaping the future of electric mobility.

Michal Pukala
Electronics and Telecommunications engineer with Electro-energetics Master degree graduation. Lightning designer experienced engineer. Currently working in IT industry.