Onsemi (Nasdaq ON) is a pioneer in sensing and intelligent power technologies, has today announced “EliteSiC” as the name of its silicon carbide (SiC) family of. In the coming week the company will unveil 3 new family members which include the EliteSiC MOSFET 1700 V and two avalanche-rated EliteSiC Schottky Diodes – during the Consumer Electronics Show (CES) in Las Vegas. These new devices offer efficient, reliable performance for industrial and energy infrastructure drive applications. They will also showcase the company’s leadership position in the field of industrial silicon carbide solutions.
The 1700V EliteSiC MOSFET ( NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV) SiC solutions, needed for industrial applications that require high power. The two avalanche-rated EliteSiC Schottky diodes ( NDSH25170A, NDSH10170A) permit designers to ensure steady high-voltage operation even at extreme temperatures, while also offering high efficiency that is enabled by SiC.
“By providing best-in-class efficiency with reduced power losses, the new 1700 V EliteSiC devices reinforce the high standards of superior performance and quality for products in our EliteSiC family as well as further expand the depth and breadth of onsemi’s EliteSiC,” said Simon Keeton, executive vice general manager and president, Power Solutions Group, onsemi. “Together with our end-to-end SiC manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers.”
Renewable energy sources are constantly changing to higher voltages by converting solar systems ranging from 1100V to 1500V DC buses. In order to accommodate this clients require MOSFETs that have a greater BV. The 1800 V EliteSiC MOSFET is able to provide the highest Vgs range of 15 V/25 Volt, which makes it ideal for applications that require fast switching, where the gate voltage is increasing to -10V. This will increase system reliability.
Under a test conditions of 1200 V and 40 Amps at 1700 V, the EliteSiC MOSFET has the gate charge (Qg) of 200 nC. This is a market leader when compared to competitors that have close to 300 nC. Low Qg is crucial for achieving the highest efficiency in fast switching and renewable energy systems that require high power.
With a BV rating of 1800 V at 1700 V, these EliteSiC Schottky diode devices offer an increased margin between the maximum reverse voltage (VRRM) and the maximum repeated reverse voltage that the diode produces. They also offer outstanding reverse leakage performance, with a an IR maximum (IR) of only 40 uA at 25degC , and 100 uA at 175degC , substantially higher than competing devices, which are typically measured at 100 uA when they are at 25degC.
