Infineon Technologies AG, an industry leader in semiconductor solutions, recently unveiled the 7th Generation TRENCHSTOP IGBT family’s discrete 650 V IGBT7 H7 variant as a major step toward meeting increasing demands for energy solutions that are not only energy-efficient but also eco-friendly. This innovation stands as proof of Infineon’s dedication to providing power solutions that balance efficiency with environmental responsibility.
At the core of this advancement lies an innovative EC7 co-packed diode, seamlessly integrated with an emitter-controlled design. When coupled with high-speed technology, it creates sustainable energy solutions to meet modern world requirements. TRENCHSTOP IGBT7 H7 takes full advantage of micro-pattern trench technology for exceptional control and performance resulting in significant loss reduction, elevated efficiency, and higher power density allowing its use across various domains.
The TRENCHSTOP IGBT7 H7’s versatility makes it ideal for an array of applications, spanning string inverters and energy storage systems (ESS) to electric vehicle charging setups and industrial uninterruptible power supplies (UPSs). Furthermore, its prowess extends into traditional industries such as welding.
Delve deeper and you will find this discrete module, operating at 650 V, is capable of producing up to 150 A. With current ratings from 40 A to 150 A, this discrete module comes in four distinct package types – TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus; its TO-247-3 HCC variant stands out for its high creepage distance – an integral aspect of safety design in high voltage environments.
TO-247 4-pin packages, offered both as standard (IKZA) and Plus (IKY) versions, provide several benefits when it comes to increased performance. Not only can these packages reduce switching losses significantly; they can also lower voltage overshoot, minimize conduction losses and offer the lowest reverse current loss – this combination simplifies designs while eliminating the need for connecting devices in parallel.
Environment resilience is at the core of everything for which TRENCHSTOP IGBT7 H7 stands out, from robust moisture resistance to its qualification under JEDEC 47/20/22 HV-H3TRB tests as an industrial device.
Industry continues to advance towards more eco-friendly power solutions, and this IGBT stands as a testament to progress. Boasting considerable improvements over its predecessors, TRENCHSTOP IGBT7 H7 is tailored perfectly for use with NPC1 topology applications like solar energy and energy storage systems (ESS). Amidst an ever-evolving landscape, this innovation serves as a beacon of hope towards more efficient and sustainable energy futures.
What are EC7 co-packed diodes?
Cutting-Edge EC7 Co-packed Diodes” refer to diodes which are co-packaged with another component – in this instance an IGBT (Insulated Gate Bipolar Transistor). EC7 co-packed diodes offer advanced designs integrated within one package as an IGBT for increased efficiency and optimized performance in power electronic applications.
IGBTs are commonly employed in power electronic systems used in renewable energy systems, electric vehicles and industrial applications to manage electrical power flow. But when used with switching transitions they can cause voltage spikes that must be managed effectively to ensure smooth operations without damage to either IGBT or diodes paired with it. Diodes often are paired together for optimal operation by providing low resistance pathways for their voltage spikes to safely dissipate during switching transitions – providing protection from damaging IGBTs while simultaneously enabling efficient operations.
“EC7” likely refers to the particular characteristics or design of a diode. Co-packing indicates that this diode is integrated within an IGBT package for optimal electrical and thermal performance; this integration reduces losses during operation while simultaneously increasing overall device efficiency.
“Closer to cutting-edge” diodes indicate that their design utilizes cutting-edge features or technologies for enhanced performance, higher efficiency and increased reliability in power electronics applications.
What Are The Consequences of High Creep Distance?
Creepage distance refers to the physical separation between two conductive elements on a printed circuit board or electronic component to prevent electrical arcing or discharge between them, which is an integral factor when designing electrical systems with higher voltage levels or in environments requiring safety and reliability considerations.
Creepage distance refers to a measurement along the surface of an insulating material such as PCB substrate or an encapsulating material, between two conductive parts with different potentials, in order to avoid unintended electrical conduction or short circuiting caused by factors like contamination, humidity or high voltage stress. This distance should prevent unintended electrical conductivity that might otherwise result from factors like contamination, humidity or stress from high voltage stressors such as PCB substrate or encapsulating materials deterioration or environmental exposures.
Electronic components, like IGBTs (Insulated Gate Bipolar Transistors) or other power devices, require a high creepage distance to isolate high-voltage components from lower-voltage ones and prevent voltage breakdown and electrical discharge that could result in system failure, safety risks or damage to components. A short creepage distance could potentially result in system failure, safety hazards or component destruction.
Industrial or automotive applications where electrical systems are exposed to harsh environmental conditions and different voltage levels require that sufficient spacing between conductive elements be maintained for safe and reliable functioning of electronics.
