Vishay Intertechnology, Inc. (NYSE: VSH) today presented a brand-new AEC-Q101 qualified p-channel -100 V TrenchFET ® MOSFET created to increase power thickness and performance in automotive applications. Not only is the Vishay Siliconix SQJ211ELP the market’s first such gadget in the portable 5 mm by 6 mm PowerPAK ® SO-8L bundle with gullwing leads, however it includes ideal in class on-resistance down to 30 mΩ at 10 V.
Examples and also production amounts of the SQJ211ELP are available currently, with lead times of 14 weeks.
The gadget’s -100 V score supplies the security margin called for to sustain several prominent input voltage rails, consisting of 12 V, 24 V, as well as 48 V systems. Furthermore, as a p-channel MOSFET, the SQJ211ELP allows a lot more easy gate drive designs that don’t require the charge pump required by its n-channel counterparts. Lead (Pb)-free, halogen-free, as well as RoHS-compliant, the MOSFET is 100 % Rg and UIS checked.
With high temperature operation to +175 ° C, the MOSFET supplies the durability and also reliability needed for vehicle applications such as reverse polarity protection, battery management, high side load changing, and also LED illumination. In addition, the SQJ211ELP’s gullwing leads allow for raised automated optical assessment (AOI) abilities and also provide mechanical stress and anxiety relief for enhanced board-level dependability.
Contrasted to the closest completing devices in the DPAK and D2PAK bundles, the Automotive Quality MOSFET released today provides 26 % and 46 % reduced on-resistance, specifically, while using a 50 % and also 76 % smaller footprint. The SQJ211ELP’s low on-resistance translates into power financial savings by decreasing power losses from transmission, while its exceptional gate cost to 45 nC at 10 V decreases losses from gateway driving.
