Vishay Intertechnology Integrated 40 V MOSFET Half-Bridge Power Stage Offers Best in Class RDS(ON) and FOM to Increase Power Density and Efficiency

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Vishay Intertechnology Integrated 40 V MOSFET Half-Bridge Power Stage Offers Best in Class RDS(ON) and FOM to Increase Power Density and Efficiency

Today presented a brand-new 40 V n-channel MOSFET half bridge power phase that provides boosted power density as well as efficiency for soft goods and also industrial, clinical, and also telecom applications. Incorporating high side and low side MOSFETs in one portable PowerPAIR ® 3.3 mm by 3.3 mm package, the Vishay Siliconix SiZ240DT provides finest in class on-resistance and also on-resistance times gateway charge– a vital figure of advantage (FOM) for MOSFETs used in power conversion applications.

Both TrenchFET ® MOSFETs in the SiZ240DT are internally attached in a half-bridge arrangement. The SiZ240DT’s Channel 1 MOSFET, which is usually utilized as the control switch in a concurrent buck converter, offers optimum on-resistance of 8.05 mΩ at 10 V as well as 12.25 mΩ at 4.5 V. The Channel 2 MOSFET, which is typically a simultaneous button, features on-resistance of 8.41 mΩ at 10 V as well as 13.30 mΩ at 4.5 V. These worths are up to 16 % less than the closest contending products. When integrated with low gateway cost of 6.9 nC (Channel 1) and 6.5 nC (Channel 2), the resulting on-resistance times entrance charge FOM is 14 % lower than the next best tool, allowing higher efficiency for fast changing applications.

65 % smaller than double gadgets in 6 mm by 5 mm packages, the twin MOSFET launched today is just one of one of the most small integrated items on the marketplace. It supplies designers with a space-saving remedy for electric motor control in hoover, drones, power tools, house/ office automation, and non-implantable clinical gadgets, along with half-bridge power phases for simultaneous dollar, DC/DC conversions, cordless chargers and switch-mode power materials in telecom tools and also web servers.

The incorporated MOSFET includes a wire-free interior building that decreases parasitic inductance to make it possible for high frequency changing and also therefore reduce the size of magnetics and also final designs. Its optimized Qgd/ Qgs ratio decreases sound to even more improve the device’s changing characteristics. The SiZ240DT is 100 % Rg- and UIS-tested, RoHS-compliant, as well as halogen-free.

Source: https://www.vishay.com/company/press/releases/2020/SiZ240DT/

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