Tunnel Diode Tips – Operation and Detector application

Tunnel diode is an semiconductor diode characterized by a small thickness of the “p-n junction“, a very high concentration of dopants on both sides (“p” and “n”-type doped semiconductors) and a negative dynamic resistance for a certain range of polarizing voltages. It was invented in 1957 by the Japanese physicist Leo Esaki (hence sometimes it … Continue reading Tunnel Diode Tips – Operation and Detector application