NewsROHM's Game-Changing Dual MOSFETs Usher in a New Era of Efficiency

ROHM’s Game-Changing Dual MOSFETs Usher in a New Era of Efficiency

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ROHM, a recognized name in electronics, has recently unveiled its state-of-the-art dual MOSFETs, setting a new standard in power efficiency and space conservation. These MOSFETs are designed with two 100V chips fused into one singular package, making them perfect for driving fan motors in communication base stations and industrial machinery. With the introduction of five new models to the HP8KEx/HT8KEx (Nch+Nch) and HP8MEx (Nch+Pch) series, ROHM reinforces its commitment to innovation in the semiconductor realm.

The electronics world has been abuzz with a discernible trend – a shift from the standard 12V/24V systems to the more potent 48V systems in communication infrastructures and industrial setups. This transition primarily aims to magnify efficiency by downsizing current values. Given this, the need for MOSFETs that can resist voltage fluctuations, especially since 48V power units also find use in fan motors meant for cooling, has never been greater. The challenge? Boosting the breakdown voltage typically leads to an uptick in ON resistance (RDS(on)), a metric that’s inversely related to efficiency. This predicament makes striking a balance between a lower RDS(on) and a heightened breakdown voltage an uphill task. The tech realm’s answer to this conundrum has been an increased adoption of dual MOSFETs, packing two chips into one package, which also offers the advantage of saving precious space.

In a strategic move, ROHM’s fresh-out-the-lab series – HP8KEx/HT8KEx (Nch+Nch) and the HP8MEx (Nch+Pch) – are engineered by juxtaposing Nch and Pch MOSFET chips, leveraging cutting-edge processes. A standout feature of both series is their unmatched RDS(on), made possible by the incorporation of new backside heat dispersion packages known for their superior heat dissipation properties. This innovation slashes the RDS(on) by a staggering 56% in comparison to conventional dual MOSFETs. Furthermore, integrating two chips in one package translates to notable space conservation. To put it in perspective, swapping two individual TO-252 MOSFETs for a single HSOP8 can lead to a whopping 77% reduction in footprint.

Looking forward, ROHM is all set to broaden its dual MOSFET repertoire, tailored for voltages suitable for industrial machinery. Additionally, the company has set its sights on crafting low-noise versions. As ROHM continues to push boundaries, its contributions are poised to be monumental, especially in fostering environmental sustainability by optimizing space utilization and minimizing power wastage across diverse applications.

Michal Pukala
Electronics and Telecommunications engineer with Electro-energetics Master degree graduation. Lightning designer experienced engineer. Currently working in IT industry.