In the pursuit of setting new technology standards in the field of discrete MOSFET technology, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today launched its PQFN 2 x 2 mm 2 OpMOS 5 25, 30 and 25V family. By combining thin wafer technology with innovations in packaging these new devices provide significant performance improvements in a compact size. The OptiMOS 525 V, and the 30V are developed to optimize synchronous rectification for SMPS (Switched Mode Power Supply) for telecom bricks, servers portable chargers, wireless charging. The power MOSFET can also be used to be used for electronic speed control (ESC) for smaller brushless motors for drones that need smaller forms and smaller components.
The most advanced PQFN 2×2 products offer high power density and an energy efficient dimensions, with the industry’s most low on-state resistance. The compact 2 x 2 millimeter 2 footprint of the package provides PCB layout routing the flexibility. Together with an impressive electrical performance, the product adds power density and improved form factor for the final application. Furthermore, the lower system temperature and enhanced performance allow for more flexible thermal management. These characteristics help to create a more compact user application that allows for substantial cost savings, space-saving and easy to design products.
The PQFN 2×2 family of the OptiMOS 525 V, and 30 V MOSFETs is available for sale in the following:
- PQFN 2×2 25 V: 2 x 2 mm 2, R DS(on)2.4 mO (ISK024NE2LM5)
- PQFN 2×2 30 V: 2 x 2 mm 2, R DS(on)3.6 mO (ISK036N03LM5)
More details are available on OptiMOS 525 V/30V.